Cooling block forming electrode

ABSTRACT

The present invention is a cooling block that forms an electrode for generating a plasma for use in a plasma process, and includes a channel for a cooling liquid, the cooling block comprising: a first base material and a second base material respectively made of aluminum, at least one of the first and second base materials having a recess for forming a channel for a cooling liquid; and a diffusion bonding layer, in which zinc is diffused in aluminum, and an anti-corrosion layer of a zinc oxide film, the layers being formed by interposing zinc between the first and second base materials, and by bonding the first and second base materials with zinc interposed therebetween in a heating atmosphere containing oxygen.

FIELD OF THE INVENTION

The present invention relates to a cooling block forming an electrodefor generating a plasma for use in a plasma process, and to a plasmaprocessing apparatus using the cooling block.

BACKGROUND ART

In a process for manufacturing semiconductor devices or the like, aplasma process using a plasma is frequently performed. As shown in FIG.9, a plasma processing apparatus for the plasma process includes, forexample, a process vessel 10 of a vacuum chamber, and a stage 11disposed in the process vessel 10 for supporting thereon a semiconductorwafer (hereafter referred to as “wafer”) as a substrate. The stage 11also serves as a lower electrode. A showerhead 12 having a number of gassupply holes 12 a is arranged above the stage 11. An upper electrode 13is disposed on a lower surface of the showerhead 12. The upper electrode13 is formed of an electrode plate 13 a and a cooling block 13 b.

A radio-frequency for generating plasma is applied between the upperelectrode 13 and the lower electrode 11 (stage 11) from aradio-frequency power source 15. Thus, a plasma is generated in aprocess space between the stage 11 and the upper electrode 13. Theplasma activates a process gas supplied from the showerhead 12 into theprocess vessel 10, and then the wafer W on the stage 11 is subjected toa plasma process such as an etching process and a film-depositionprocess.

A structure and properties of the upper electrode 13 in the processvessel have an impact on the plasma process. Specifically, in a plasmaetching process, for example, an in-plane uniformity or inter-planeuniformity in etching rate of the wafer(s) W is affected by thestructure and properties of the upper electrode 13. A structure foradjusting a temperature, which is also one of such impacting factors, isrequired to make uniform temperature in an upper surface of the samediameter region of the wafer W. A known structure for the upperelectrode 13 satisfying this requirement is that the electrode plate 13a made of ceramics or a conductive material, free of heavy metalcontamination, is placed at a position in contact with a process area,and that the cooling block 13 b is laid on the electrode plate 13 a. Thecooling block 13 b is positioned in a vacuum gas atmosphere, so that thecooling block 13 b has to be provided with an intricate coolant channelmeandering through the gas supply holes 12 a so as not to interfere withgas supply.

There is used the cooling block 13 b formed by joining two metal platesby brazing. A channel 14 through which a cooling liquid flows is formedin the cooling block 13 b. The cooling block 13 b should have both anexcellent thermal conductivity so as to fulfill a desired heat exchangefunction, and an excellent electric conductivity as a passage for aradio-frequency. Thus, a metal plate made of stainless steel (hereafterreferred to as “SUS”) having a high resistance and a high thermalconductivity cannot be used. In place thereof, there is generally used ametal plate made of aluminum (Al) whose resistance and thermalconductivity are much lower than those of SUS.

However, when aluminum is used, since an aluminum solid surface isexposed to the cooling liquid channel 14 which is in contact with acooling liquid, there is a possibility that an inner peripheral surfaceof the channel 14 is corroded by the cooling liquid circulatingtherethrough. The corrosion of the inner peripheral surface of thechannel 14 may then result in a blockage of the cooling liquid in thechannel 14. Thus, in order to avoid such situation, the inner peripheralsurface of the channel 14 formed in the cooling block 13 b must besubjected to an anti-corrosion treatment.

One of the anti-corrosion treatment methods is to form an aluminum oxidefilm on the inner peripheral surface of the channel 14 by alumitecoating. However, in joining the metal plates whose surfaces have beensubjected to an alumite coating process before brazing, there is concernthat an alumite coating film is cracked if the alumite coating filmcannot resist a brazing temperature. The cracked alumite coating filmcannot fully achieve an anti-corrosion function. Alternatively, themetal plates can be subjected to the alumite coating process after themetal plates have been joined to each other by brazing. In this case, anelectrolytic solution for alumite coating is poured into the channel 14.However, the complicated structure of the channel 14 may inhibitintroduction of the electrolytic solution through the channel 14. Then,parts which are not coated with alumite may be left in the channel 14,i.e., pin holes may be generated in the channel 14. Further, there isconcern that a foreign matter is deposited in the channel 14 by areaction of dissolved oxygen and alumite, causing a blockage in thechannel 14.

Another anti-corrosion treatment method is to coat the inner peripheralsurface of the channel 14 with a resin. However, also in this method,since it is necessary to pour the resin into the channel 14, thecomplicated structure of the channel 14 may inhibit the pouring of theresin. Then, parts which are not coated with alumite may be left in thechannel 14, i.e., pin holes may be generated in the channel 14. Inaddition, it is uncertain whether such cooling block 13 b provides asufficient thermal conductivity.

Another method is to arrange a pipe in the cooling block 13 b. However,it is significantly difficult to intricately bend a pipe. Further, thepipe will not withstand a brazing temperature (about 600° C.) at abrazing step. Thus, this method cannot be adopted.

If a chiller is used, a convenient material such as aluminum and coppercan be used, because this method is free from the need for consideringthe anti-corrosion property. However, it is often the case that themethod is obliged to be abandoned, in terms of costs and spaces.)

JP2002-86295A (especially sections 0002 and 0019 discloses a method ofmanufacturing a composite used in a radiator in an automobile. That isto say, there is provided a composite used as a flat tube. The compositeincludes three laminates, i.e., a wax member containing Si, an aluminumalloy core member, and a sacrificial member made of an Al—Zn basedalloy, which are combined to each other by electric-resistance welding,with the wax member in the composite facing outside. The composite ismanufactured by applying a sacrificial agent to one surface of the coremember, and hot-rolling the laminates. However, there is no suggestionfor a suitable structure and manufacturing method of a cooling blockwhich forms an electrode for generating plasma for use in a plasmaprocess.

SUMMARY OF THE INVENTION

The present invention has been made in view of the above disadvantagesto effectively solve the same. The object of the present invention is toprovide a long-life cooling block forming an electrode for generating aplasma for use in a plasma process, the cooling block being resistive tocorrosion, while fulfilling all functions required as an electrode.

The present invention is a cooling block that forms an electrode forgenerating a plasma for use in a plasma process, and that includes achannel for a cooling liquid, the cooling block comprising: a first basematerial and a second base material respectively made of aluminum, atleast one of the first and second base materials having a recess forforming a channel for a cooling liquid; and a diffusion bonding layer,in which zinc is diffused in aluminum, and an anti-corrosion layer of azinc oxide film, the layers being formed by interposing zinc between thefirst and second base materials, and by bonding the first and secondbase materials with zinc interposed therebetween in a heating atmospherecontaining oxygen.

According to the present invention, since both the first and second basematerials are made of aluminum, any function required for an electrodecan be fully satisfied. On the other hand, by interposing zinc betweenthe first and second base materials to form a diffusion bonding layer ofzinc to aluminum and an anti-corrosion layer of a zinc oxide film, it iseasy to form the anti-corrosion layer on an inner peripheral surface ofthe channel through which a cooling liquid flows. Thus, it is possibleto eliminate the above-described difficulties which may arise when thesurface treatment is performed before brazing, and the difficultieswhich may arise when the surface treatment is performed after brazing.Further, the anti-corrosion layer of the zinc oxide film can be easilyformed all over the channel even if it is complicated, and there is nopossibility that the film is cracked. Furthermore, since bonding of thebase materials and forming of the anti-corrosion layer can be carriedout at the same time, the manufacturing process can be significantlysimplified.

The anti-corrosion layer (zinc oxide film) serves as a sacrifice for acorrosive action of the cooling liquid to protect the aluminum basematerial against corrosion. Thus, the service life of the cooling blockcan be elongated. Since the frequency for changing the cooling block canbe decreased, a maintenance operation of the cooling block can besimplified. Besides, since the anti-corrosion layer (zinc oxide film) issubstantially identical to the base material (aluminum) in electricconductivity and thermal conductivity, the anti-corrosion layer does notinterfere with an electric property and thermal property which ought tobe provided by the cooling block forming an electrode.

Preferably, an amount of zinc contained in the zinc oxide film is 30 gor more per 1 m².

In addition, a brazing material selected from nickel, silicon, copper,boron, phosphorus, chrome, iron and carbon may be further interposedbetween the first and second base materials.

For example, the cooling block has a plurality of gas supply holespassing therethrough in a thickness direction, and provides an upperelectrode opposed to a lower electrode on which an object to beprocessed is placed.

The present invention is a cooling block that forms an electrode forgenerating plasma for use in a plasma process, and that includes achannel for a cooling liquid, the cooling block comprising: a first basematerial and a second base material respectively made of aluminum, atleast one of the first and second base materials having a recess forforming a channel for a cooling liquid; a first stainless plate bondedto the first base material; a second stainless plate bonded to thesecond base material; and a diffusion bonding layer of stainless andstainless formed at a position where the first stainless plate and thesecond stainless plate are bonded to each other, the diffusion bondinglayer being formed by bonding the first base material, the second basematerial, the first stainless plate, and second stainless plate, withthe first and second stainless plates being opposed and in tight contactwith each other; wherein a diffusion boding layer of stainless andaluminum is formed at a position where the first aluminum base materialand the first stainless plate are bonded to each other, and a diffusionbonding layer of stainless and aluminum is formed at a position wherethe second aluminum base material and the second stainless plate arebonded to each other.

According to the present invention, it is easy to form the channel for acooling liquid out of stainless (SUS). The stainless channel isresistive to a corrosion by a cooing liquid, and does not interfere withan electric property and thermal property required for an electrode.

For example, the cooling block has a plurality of gas supply holespassing therethrough in a thickness direction, and provides an upperelectrode opposed to a lower electrode on which an object to beprocessed is placed.

In this case, an inner peripheral surface of each gas supply hole ispreferably coated with the first and/or second base material.

In addition, the present invention is a plasma processing apparatuscomprising: a process vessel whose inside can be hermeticallymaintained; a stage disposed in the process vessel to hold thereon asubstrate to be plasma-processed, the stage also serving as anelectrode; an electrode having a cooling block according to claim 1, theelectrode having the cooling block being disposed in the process vesselto be opposed to the stage; a gas supply part for introducing a processgas into the process vessel; and a plasma generating means that forms aradio-frequency electric field between the stage and the electrodehaving the cooling block to make the process gas plasma.

The cooling block may function as a showerhead, with a number of gassupply holes passing therethrough in a thickness direction. The coolingblock can form an electrode by itself. However, in general, the coolingblock forms an electrode together with an electrode plate which has anumber of gas supply holes but does not have a channel for a coolingliquid.

Preferably, an amount of zinc contained in the zinc oxide film is 30 gor more per 1 m².

In addition, the present invention is a method of manufacturing acooling block that forms an electrode for generating a plasma for usedin a plasma process, the method comprising the steps of: preparing afirst base material and a second base material respectively made ofaluminum, at least one of the first and second base materials having arecess for forming a channel for a cooling liquid; formingsimultaneously a diffusion bonding layer, in which zinc is diffused inaluminum, and an anti-corrosion layer of a zinc oxide film, byinterposing zinc between the first and second base materials and bybonding the first and second base materials with zinc interposedtherebetween in a heating atmosphere containing oxygen.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic sectional view of an RIE plasma etching apparatusincluding a cooling block in one embodiment of the present invention;

FIG. 2 is an enlarged plan view of the cooling block in the apparatusshown in FIG. 1;

FIG. 3 is an enlarged sectional view of the cooling block in FIG. 2;

FIGS. 4A and 4B are sectional views of assistance in explaining amanufacturing method of the cooling block shown in FIGS. 2 and 3;

FIGS. 5A to 5C are, following FIGS. 4A and 4B, sectional views ofassistance in explaining the manufacturing method of the cooling blockshown in FIGS. 2 and 3;

FIG. 6A is a perspective view of assistance in explaining anothermanufacturing method of the cooling block shown in FIGS. 2 and 3, andFIG. 6B is a sectional view of assistance in explaining the anothermanufacturing method of the cooling block shown in FIGS. 2 and 3;

FIGS. 7A to 7D are, following FIGS. 6A and 6B, sectional views ofassistance in explaining the another manufacturing method of the coolingblock shown in FIGS. 2 and 3;

FIG. 8 is a graph showing the result of the experiment conducted forevaluating the effects of the present invention; and

FIG. 9 is a schematic sectional view of a conventional plasma processingapparatus.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments of the cooling block according to the present invention willbe described in detail below with reference to the attached drawings.

First Embodiment

FIG. 1 is a schematic sectional view of an RIE (Reaction Ion Etching)plasma etching apparatus including a cooling block in a first embodimentof the present invention. As shown in FIG. 1, the plasma etchingapparatus in this embodiment includes a process vessel 2 (vacuumchamber) made of, e.g., aluminum. The process vessel 2, which has anupper cylindrical part 2 a of a smaller diameter and a lower cylindricalpart 2 b of a larger diameter, can be hermetically sealed.

In the process vessel 2, there is disposed a support table 3, whichsupports horizontally a semiconductor wafer W (hereafter referred to as“wafer”) as a substrate to be processed and also serves as a lowerelectrode. The support table 3 is made of, e.g., aluminum, and issupported by a conductive support base 5 via an insulating plate 4. Afocus ring 31 made of, e.g., silicon (Si) is disposed on an upperperiphery of the supporting table 3. A lower part of the support base 5is covered with a cover 32. A baffle plate 33 is disposed outside thesupport base 5. The baffle plate 33 is conducted to the process vessel 2through the support base 5 and the cover 32. The process vessel 2 isgrounded.

A showerhead 6 is disposed on a top wall of the process vessel 2. Theshowerhead 6 performs as a gas supply part for introducing a process gasinto the process vessel 2. A lower surface of the showerhead 6 providesan upper electrode 7 functioning as a shower plate. The upper electrode7 is formed of a disc-shaped electrode plate 7 a of, e.g., 20 mm inthickness, and a disc-shaped cooling block 80 of, e.g., 20 mm inthickness laid on the electrode plate 7 a. The electrode plate 7 a islocated on a region in contact with a process area, and is made ofceramics or a conductive material, free of heavy metal contamination.The upper electrode 7 is arranged in parallel with the support table 3serving as a lower electrode. That is, the support table 3 as a lowerelectrode and the upper electrode 7 constitute a pair of parallel plateelectrodes. The electrode plate 7 a is provided with a number of gasjetting holes 71. The upper electrode 7 is a member for emittingelectric flux lines, for making a process gas plasma. Thus, in order togenerate a plasma offering an excellent in-plane uniformity in a surfaceof the wafer W, a size of the upper electrode 7 is preferably equal toor larger than a size of the surface to be processed of the wafer W. Theupper electrode 7 is grounded via the process vessel 2.

An outlet port 21 is formed in a bottom wall of the lower part 2 b ofthe process vessel 2. A vacuum pump 22 is connected to the outlet port21. By actuating the vacuum pump 22, a pressure in an inside of theprocess vessel 2 can be reduced to a predetermined vacuum degree. Aloading/unloading port 23 is formed in a sidewall of the upper part 2 aof the process vessel 2, through which the wafer W is loaded andunloaded. The loading/unloading port 23 is opened and closed by a gatevalve 24.

A first radio-frequency power source 26 for generating plasma isconnected to the support table 3 via a matching device 28. A secondradio-frequency power source 27 for drawing ion is connected to thesupport table 3 via a matching device 25. A radio-frequency power of apredetermined frequency is supplied from the first radio-frequency powersource 26 to the support table 3. A radio-frequency power, whosefrequency is lower than that of the radio-frequency power from the firstradio-frequency power source 26, is supplied from the secondradio-frequency power source 27 to the support table 3.

An electrostatic chuck 34 for electrostatically absorbing the wafer W isdisposed on a surface of the support table 3.

The electrostatic chuck 34 is formed by interposing an electrode 34 abetween insulating members 34 b. A DC power source 35 is connected tothe electrode 34 a. When a voltage is applied to the electrode 34 a fromthe DC power source 35, the wafer W is absorbed by an electrostaticforce such as Coulomb force.

A cooling chamber 36 is disposed in the support table 3. A coolant iscirculated through the cooling chamber 36, by introducing the coolantthereinto through a coolant introducing pipe 36 a and discharging thecoolant through a coolant discharging pipe 36 b. A cold heat of thecoolant is transferred to the wafer W through the support table 3,whereby a surface of the wafer W can be controlled to have a desiredtemperature.

In order that the wafer W can be effectively cooled by the (circulating)coolant introduced into the cooling chamber 36 even when the processvessel 2 is evacuated by the vacuum pump 22 to be in substantially avacuum condition, a cooling gas can be introduced between a surface ofthe electrostatic chuck 34 and a rear surface of the wafer W from a gasintroducing mechanism 37 through a gas supply line 38. Due to theintroduction of the cooling gas, the cold heat of the coolant can beeffectively transferred to the wafer W, whereby a cooling efficiency ofthe wafer W can be enhanced.

A gas inlet port 72 is formed in an upper part of the showerhead 6. Aspace 73 in which a gas is diffused is formed in the showerhead 6. Oneend of a gas supply pipe 74 is connected to the gas inlet port 72. Aprocess gas supply system 75 is connected to the other end of the gassupply pipe 74.

A multipole ring magnet is arranged concentrically around the upper part2 a of the process vessel 2. In this embodiment, there are arranged twomultipole ring magnets, i.e., an upper multipole ring magnet 25 a and alower multipole ring magnet 25 b, with the loading/unloading port 23positioned therebetween. Each of the multipole ring magnets 25 a and 25b is formed of a plurality of anisotropic segment columnar magnets whichare attached to a ring-shaped magnetic casing. Magnetic poles of theadjacent segment columnar magnets are oriented in the mutually reversedirection. Owing to this arrangement, lines of magnetic force are formedbetween the adjacent segment magnets, and a magnetic field is formedonly an area surrounding the process space between the upper and lowerelectrodes. Such a magnetic field can confine a plasma within theprocess space.

Next, the cooling block 80 is described in detail. The cooling block 80comprises a base material 8 made of aluminum (Al). As shown in FIG. 2, ameandering channel 81 is formed in the base material 8 through which acooling liquid such as water flows. A number of gas jetting holes 82 aresubstantially uniformly drilled in the base material 8 in such a mannerthat the holes 82 avoid the channel 81 (in this example, the holes 82are formed in an area between the adjacent portions of the channel 81).

The gas jetting holes 82 are arranged so as to correspond to the gasjetting holes 71 formed in the electrode plate 7 a, when the electrodeplate 7 a is superposed on the cooling block 80. A process gas issupplied to the process space between the upper and lower electrodesthrough the gas jetting holes 71 and 82.

A cooling liquid is introduced into the channel 81 through a coolingliquid introducing pipe 83 a, and is discharged through a cooing liquiddischarging pipe 83 b. Passing then through a temperature adjustingapparatus outside the plasma processing apparatus, the cooling liquid iscirculated. Thus, a temperature of the upper electrode 7 can be set at apredetermined one, thereby controlling a plasma generated above thewafer W in a suitable condition for a desired process.

As shown in FIG. 2, the cooling liquid introducing pipe 83 a and thecooling liquid discharging pipe 83 b respectively extend upward from anupper surface of the cooling block 80 to be connected to a channel inthe upper part 2 a of the process vessel 2 (in FIG. 1, the coolingliquid introducing pipe 83 a is invisible by the cooling liquiddischarging pipe 83 b). As shown in FIG. 3, a zinc oxide film(anti-corrosion film) 94, which will be described hereinbelow, is formedall over an inner peripheral surface of the channel 81.

A manufacturing method of the cooling block 80 is concretely describedwith reference to FIGS. 4A to 5C.

At first, there are prepared a first base material (lower member) 8 amade of aluminum having on its upper surface recesses 80 a for forming achannel for a cooling liquid, and a second base material (upper member)8 b made of aluminum having flat upper and lower surfaces (see, FIG.4A).

Then, a coating liquid (slurry) formed by dispersing zinc (Zn) powder ina medium such as a solvent is applied to the upper surface of the firstbase material 8 a by a gas spray or the like. It is preferable to spray30 g or more of zinc per 1 m². A coating liquid (slurry) formed bydispersing a brazing material such as nickel (Ni) powder in a solvent isapplied to an upper surface of the second base material 8 b. Thus, asshown in FIG. 4B, a Zn coating film 91 is formed on the upper surface(surface having the recesses) of the first base material 8 a, and an Nicoating film 92 is formed on the surface of the second base material 8b.

Thereafter, the first and second base materials 8 a and 8 b are loadedinto a heating furnace of a reduced-pressure atmosphere containingoxygen, such as a reduced-pressure air atmosphere, with the uppersurface of the first base material 8 a having the Zn coating film 91formed thereon and the surface of the second base material 8 b havingthe Ni coating film 92 formed thereon being attached to each other. Asshown in FIG. 5A, the first and second base materials 8 a and 8 b areheated, with the lower surface of the first base material 8 a beingsupported by a supporting member 84, while the upper surface of thesecond base material 8 b being urged to the lower surface of the firstbase material 8 a by a pressure. The zinc and nickel are diffused in thealuminum and bonded thereto at a bonding boundary surface by diffusionbonding. Thus, as shown in FIG. 5B, a bonding layer (diffusion bondinglayer) 93 made of Al—Zn—Ni is formed. The recesses 80 a in the firstbase material 8 a are covered with the second base material 8 b tothereby define the channel 81 in the cooling block 80. The zinc oxidefilm 94 is formed inside the recesses 80 a by zinc and oxygen. That isto say, the zinc oxide film 94 is formed in the overall inner surface ofthe channel 81. To be more precise, the zinc oxide film 94 in thisembodiment is a Zn—Ni—Al composite oxide film.

Following thereto, as shown in FIG. 5C, the gas jetting holes 82 with adiameter between 0.5 to 1 mm, for example, are formed in the coolingblock 80 in areas between the adjacent portions of the channel 81 bymeans of a cutting tool such as a drill 85.

Although the recesses 80 a are formed in the upper surface of the firstbase material 8 a in this embodiment, the recesses 80 a may be formed inone of the surfaces of the second base material 8 b. Alternatively, therecesses 80 a may be formed in each of the opposed surfaces of the firstand second base materials 8 a and 8 b at positions corresponding to eachother, so that the channel 81 is formed by the recesses 80 a formed inboth the base materials 8 a and 8 b.

Next, an example of an operation of the plasma etching apparatus asstructured above is described below.

At first, the gate valve 24 is opened, and the wafer W is loaded intothe process vessel 2 through the loading/unloading port 23 and is placedon the support table 3. By applying a predetermined voltage from the DCpower source 35 to the electrode 34 a of the electrostatic chuck 34, thewafer W is absorbed and held by the electrostatic chuck 34. Thereafter,the atmosphere in the process vessel 2 is discharged by the vacuum pump22 through the outlet port 21 to a predetermined vacuum degree.

A process gas such as fluorine (F) is supplied from the process gassupply system 75 through the gas supply pipe 74 and the gas inlet port72 to the space 73 in the showerhead 6. The process gas passes throughthe gas jetting holes 82 in the cooling block 80 and the gas jettingholes 71 in the electrode plate 7 a to be jetted to the process space. Agas pressure in the process vessel 2 is set at, e.g., 13 to 1,333 Pa(100 mTorr to 10 Torr). Under this pressure condition, a radio-frequencypower of e.g., 100 MHz is supplied from the first radio-frequency powersource 26 to the support table 3. Flowing through the support table 3,the process space, the upper electrode 7 (cooling block 80), and theprocess vessel 2, the radio-frequency forms a radio-frequency electricfield in the process atmosphere.

A radio-frequency power of, e.g., 3.2 MHz is supplied from the secondradio-frequency power source 27 so as to control an ion energy of aplasma. This radio-frequency also forms a radio-frequency electric fieldbetween the upper electrode 7 and the support table 3 as the lowerelectrode. A horizontal magnetic field is formed between the showerhead6 and the support table 3 by the dipole ring magnets 25 a and 25 b.Thus, a transverse electromagnetic field is formed in the process spacebetween the electrodes where the wafer W is placed. The transverseelectromagnetic field causes a drift of electrons, which causes amagnetron electric discharge. Due to the magnetron electric discharge,the process gas is made plasma, and a predetermined film formed on thesurface of the wafer W is etched by the plasma.

Meanwhile, a cooling liquid such as water is introduced to the channel81 in the cooling block 80 through the cooling liquid introducing pipe83 a. Thus, the electrode plate 7 a is adjusted through the coolingblock 80, in such a manner that a lower surface of the electrode plate 7a is uniformly maintained at a set temperature of, e.g., 60° C. Thiscontributes an in-plane uniformity in electron density of the plasmaabove the wafer W.

In the above embodiment, since the base material 8 of the cooling block80 is made of aluminum, the function(s) required for the upper electrode7 can be sufficiently satisfied. The base materials 8 a and 8 b made ofaluminum are bonded to each other with zinc therebetween. Thus, as shownin FIG. 5B, forming of the diffusion bonding layer in which zinc isdiffused in aluminum and forming of the zinc oxide film 94 on the innerperipheral surface of the channel 81, through which a cooling liquidflows, can be simultaneously carried out. Thus, it is possible toeliminate the above-described difficulties which may arise when thesurface treatment is performed before brazing, and the difficultieswhich may arise when the surface treatment is performed after brazing.Further, the zinc oxide film 94 can be easily formed all over thechannel even if it is complicated, and there is no possibility that thefilm is cracked. Furthermore, since bonding of the base materials andforming of the zinc oxide film 94 can be carried out at the same time,the manufacturing process can be significantly simplified.

In addition, the zinc oxide film 94 serves as a sacrifice for acorrosive action of the cooling liquid to protect the aluminum basematerials 8 a and 8 b against corrosion. Thus, the service life of thecooling block 80 can be elongated. Even if the zinc oxide film 94 iscracked to generate pin holes, the corrosion of aluminum can besuppressed, because zinc is corroded prior to aluminum in terms ofelectronegativity. Thus, the frequency for changing the cooling block 80can be decreased, which results in simplifying a maintenance operationof the cooling block 80. Besides, since the zinc oxide film 94 issubstantially identical to the aluminum base materials 8 a and 8 b inelectric conductivity and thermal conductivity, the zinc oxide film 94does not interfere with an electric property and thermal property whichought to be provided by the cooling block 80 forming an electrode.

In the above embodiment, although the cooling block 80 is disposed onthe upper surface of the electrode plate 7 a, the cooing block 80 may bedisposed on a side of the support table 3 to form a part of a lowerelectrode.

Second Embodiment

In a cooling block in a second embodiment of the present invention, aninner surface of a channel 81 formed in a base material 8 is entirelycovered with stainless steel (SUS).

A manufacturing method of such cooling block 90 is concretely describedwith reference to FIGS. 6A to 7D.

At first, as shown in FIGS. 6A and 6B, a lower plate 94 a made of SUS isprocessed to have, e.g., parallel grooves as recesses 80 a for forming achannel. Holes 95 are drilled in ridges 80 b between the grooves in thelower plate 94 a. A diameter of the hole 95 is larger than that of a gasjetting hole formed in a base material, which is described below. A flatupper plate 94 b made of SUS is also provided with the holes 95, eachhaving a diameter larger than the hole formed in the base material,which is described below. The holes 95 drilled in the lower plate 94 aand the holes 95 drilled in the upper plate 94 b are arranged so as tocorrespond to each other, when the lower plate 94 a and the upper plate94 b are stacked with each other. In order to form a round plate havingtherein a meandering recess as shown in FIG. 2, the lower plate 94 a maybe manufactured by processing a plurality of plate elements and weldingthe same. The plates shown in FIG. 6A may be regarded as such plateelements.

Then, lower surfaces of the lower plate 94 a and the upper plate 94 bare immersed in a crucible of melted aluminum. After the aluminum iscooled and made solid, the lower plate 94 a and upper plate 94 b aretaken out from the crucible. Thus, diffusion bonding of SUS-Al, in whichSUS is diffused in aluminum, is achieved at a boundary surface where SUSand Al are in contact with each other. An aluminum base material 8 a andan aluminum base material 8 b are formed on the lower surfaces of thelower plate 94 a and the upper plate 94 b, respectively (see, FIG. 7A).The holes 95 formed in the lower plate 94 a and the upper plate 94 b arefilled with Al.

Thereafter, the lower plate 94 a and the upper plate 94 b are attachedto each other, and are loaded into a heating furnace of, e.g., areduced-pressure air atmosphere. As shown in FIG. 7B, the plates 94 aand 94 b are heated, with the lower plate 94 a being supported by asupporting member 84, while an upper surface of the upper plate 94 bbeing urged by a pressure. Thus, a bonding layer (diffusion bodinglayer) 96 of SUS-SUS is formed by diffusion bonding on a boundarysurface where the lower plate 94 a and the upper plate 94 b are bondedto each other. The recesses 80 a in the lower plate 94 a are coveredwith the upper plate 94 b to thereby define a channel 81 in the coolingblock 90. A bonding layer (diffusion bonding layer) 97 of Al—Al isformed in a boundary surface where the Al in the holes 95 in the lowerplate 94 a and the Al in the holes 95 in the upper plate 94 b are bondedto each other. Following thereto, the bonded upper and lower plates 94 band 94 a are cooled so that the cooling block 90 is obtained (see, FIG.7C). The holes 95 in the plates 94 a and 94 b made of SUS are filledwith Al. Gas jetting holes 82 are drilled in these portions in thesucceeding step.

As shown in FIG. 7D, by drilling the holes 95 filled with Al by means ofa drill 85 having a diameter smaller than that of the hole 95, the gasjetting holes 82 are formed in the cooling block 90 at positionscorresponding to the holes 95 in the plates 94 a and 94 b.

In this embodiment, although the recesses 80 a are formed in one surfaceof the lower plate 94 a, the recesses 80 a may be formed in one surfaceof the upper plate 94 b. Alternatively, the recesses 80 a may be formedin each of the opposed surfaces of the lower plate 94 a and the upperplate 94 b at positions corresponding to each other, so that the channel81 is formed by the recesses 80 a formed in both the plates 94 a and 94b.

In manufacturing the cooling block 90, an outer surface of each of thealuminum base material 8 a and 8 b may be subjected to an alumitecoating treatment.

The cooling block 90 obtained by the above method can be applied to theplasma processing apparatus shown in FIG. 1.

In the above embodiment, the channel 81 for a cooling liquid is made ofstainless (SUS). Since the stainless channel 81 is resistive to acorrosion by a cooling liquid, a service life of the cooling block 90can be prolonged.

In addition, although the channel 81 made of SUS having a highresistivity and thermal conductivity is included in the cooling block90, the stainless channel 81 does not interfere with an electricproperty and thermal property which ought to be provided by the coolingblock 90 as an electrode. This is because, since parts other than thechannel 81 are made of aluminum, the outer aluminum parts provide a mainpath through which radio-frequency and heat pass.

In the above embodiment, since an inner peripheral surface of each gasjetting hole 82 is coated with Al, there is no possibility that SUS iscorroded by a process gas when the process gas is jetted through the gasjetting holes 82. This also contributes to extension of service life ofthe cooling block 90.

A substrate in the present invention is not limited to a wafer asexplained in the above embodiments. For example, the substrate may be aglass substrate, for a flat panel used in a liquid crystal display orplasma display, or a ceramic substrate.

EXAMPLES

Next, an experiment conducted for verifying the effects of the presentinvention are described.

Example 1

A test block corresponding to the cooling block 80 was manufactured inaccordance with the same procedures as those of the first embodiment(see, FIGS. 4A to 5C).

An amount of zinc applied to the surface of the first base material 8 awas 30 g per 1 m². A brazing material containing 80% or more by weightof Ni was applied to the surface of the second base material 8 b. Thecooling block manufactured as above is called Example 1.

Example 2

A cooling block was manufactured in accordance with the same proceduresas those of Example 1, except for that an amount of zinc applied to thesurface of the first base material 8 a was 60 g per 1 m². The coolingblock as manufactured above is called Example 2.

Comparative Example

A cooling block was manufactured in accordance with the same proceduresas those of Example 1, except for that no zinc was applied to the basematerial 8 a. The cooling block as manufactured above is calledComparative Example.

(Procedures, Conditions, and Results of Experiment)

5,000 ml of corrosion accelerating liquid having a pH of 6.4 to 6.8(actual measurement value 6.6) was circulated through a circulation pathincluding a channel formed in each of the cooling blocks of Example 1,Example 2, and Comparative Example. Components contained in the 5,000 mlof corrosion accelerating liquid were: 10 ppm of copper ion; 100 ppm ofchlorine ion; 100 ppm of sulfate ion; and 100 ppm of bicarbonate ion.The corrosion accelerating liquid circulating the channel was replacedwith a new corrosion accelerating liquid for every one week.

The states of the channels in the blocks corroded by the circulatingcorrosion accelerating liquid were observed for every one week (1stweek, 2nd week . . . 20th week) according to the following manner. Thatis, a portion of 25 mm in length of the channel of each of the coolingblock of Example 1, Example 2, and Comparative Example was cut out.Then, the cut-out portion was divided at the brazing portion (bondingportion), and a corrosion state in the cross-section was observed. FIG.8 shows the experiment result. In FIG. 8, the axis of ordinate depicts acorrosion depth (mm), and the axis of abscissa depicts a period of timefor circulating the corrosion accelerating liquid.

As apparent from FIG. 8, the progress of corrosion in Examples 1 and 2is slower than that of Comparative Example. In other words, to reach thecorrosion depth of 0.48 mm, it took eleven weeks for Example 1, and 20weeks for Example 2. On the other hand, it took 8.5 weeks forComparative Example. Namely, it can be seen that the service life ofExample 1 is about 1.3 times as long as that of Comparative Example, andthat the service life of Example 2 is about 2.4 times as long as that ofComparative Example. This is because the zinc oxide film 94 serves as asacrifice of the corrosion by the corrosion accelerating liquid.Further, since a potential of zinc oxide is lower than that of aluminum,the zinc oxide film 94 is corroded slower than the aluminum parts. Ascan be understood from the result, it is effective to form the zincoxide film 94 on the whole inner surface of the channel 81 of thecooling block 80. As described above, Example 2 has a longer servicelife than Example 1 does. Thus, it can be understood that, the largerthe amount of zinc applied to the surface of the first material 8 a is,the more effectively the corrosion depth can be suppressed. Note that,although the 60 g of zinc per 1 m² is preferred, even the 30 g of zincper 1 m² can produce a sufficiently remarkable effect.

1-10. (canceled)
 11. A cooling block that forms an electrode forgenerating plasma for use in a plasma process, and that includes achannel for a cooling liquid, the cooling block comprising: a first basematerial and a second base material respectively made of aluminum, atleast one of the first and second base materials having a recess forforming a channel for a cooling liquid; a first stainless plate bondedto the first base material; a second stainless plate bonded to thesecond base material; and a diffusion bonding layer of stainless andstainless formed at a position where the first stainless plate and thesecond stainless plate are bonded to each other, the diffusion bondinglayer being formed by bonding the first base material, the second basematerial, the first stainless plate, and second stainless plate, withthe first and second stainless plates being opposed and in tight contactwith each other, wherein a diffusion bonding layer of stainless andaluminum is formed at a position where the first aluminum base materialand the first stainless plate are bonded to each other, and a diffusionbonding layer of stainless and aluminum is formed at a position wherethe second aluminum base material and the second stainless plate arebonded to each other.
 12. The cooling block according to claim 11,wherein the cooling block has a plurality of gas supply holes passingtherethrough in a thickness direction, and provides an upper electrodeopposed to a lower electrode on which an object to be processed isplaced.
 13. The cooling block according to claim 12, wherein an innerperipheral surface of each gas supply hole is coated with the firstand/or second base material.
 14. A plasma processing apparatuscomprising: a process vessel whose inside can be hermeticallymaintained; a stage disposed in the process vessel to hold thereon asubstrate to be plasma-processed, the stage also serving as anelectrode; an electrode having a cooling block according to claim 11,the electrode having the cooling block being disposed in the processvessel to be opposed to the stage; a gas supply part for introducing aprocess gas into the process vessel; and a plasma generating means thatforms a radio-frequency electric field between the stage and theelectrode having the cooling block to make the process gas plasma.
 15. Amethod of manufacturing a cooling block that forms an electrode forgenerating a plasma for use in a plasma process, the method comprisingthe steps of: preparing a first base material and a second base materialrespectively made of aluminum, at least one of the first and second basematerials having a recess for forming a channel for a cooling liquid;bonding a first stainless plate to the first base material, so as toform a diffusion bonding layer of stainless and aluminum; bonding asecond stainless plate to the second base material, so as to form adiffusion bonding layer of stainless and aluminum; and bonding the firststainless plate and the second stainless plate to each other, so as toform a diffusion bonding layer of stainless and stainless.